silicon carbide process for making silicon carbide ceramic

Silicon Carbide is a hard and brittle ceramic material second only in terms of hardness to diamond and cubic boron nitride. SiC has an interlaced crystal structure which features different stacking sequences or polytypes that offer distinct properties. Commercially, SiC is produced through an electric arc furnace at 2200 degrees Celsius by reacting silica sand powder with petroleum coke; once formed into an green body it can then be further processed  for specific applications by special silicon carbide process.

silicon carbide process for making silicon carbide ceramic

Cold Isostatic Pressing

Under this process, fine grain silicon carbide powder is mixed uniformly with non-oxide sintering aids (binder). This mixture can then be compacted and shaped through either extrusion or cold isostatic pressing (CIP).

CIP utilizes equal pressure applied equally from all directions to pressurize all areas of a powder compact, creating uniform density throughout. This allows near net shaping and quality control as well as creating larger shapes than would be practical with other production methods. Isostatic pressing can reduce lead times and machining costs while simultaneously offering better mechanical properties.

The Acheson Process is the main production method used to manufacture silicon carbide. Created by Edward Goodrich Acheson in 1893, this procedure has become the primary means of creating this substance.

The Acheson Process produces alpha SiC, with a hexagonal crystal structure similar to Wurtzite. This form is resistant to oxidation, corrosion and thermal shock and offers low neutron cross sections making it perfect for nuclear reactor applications. Furthermore, radiation damage resistance makes this material highly valuable, making it highly resistant against damage over time while its properties can even be enhanced through chemical treatments. It’s an incredibly hard material with excellent physical properties which can even be improved through chemical treatments!

Reaction Sintering

Reaction sintering (RSP) is one of the most frequently utilized silicon carbide processes. As an easy and low-temperature process, RSP produces parts with densities up to 99.9% theoretical density; furthermore it is an efficient means for creating large size, complex shape structural parts.

Reaction sintering involves mixing silicon powder with carbon and creating a green body, which is then sintered at lower temperatures than usual sintered silicon carbide, shortening both time and heating requirements considerably. Dopant elements like nitrogen, phosphorus, beryllium aluminum or gallium increase sintering rates further.

The process is highly straightforward, requiring few raw materials, energy resources and production costs. Furthermore, grain growth during sintering is inhibited and produced sinters boast good mechanical properties.

RSSC’s pre-turnability can significantly reduce grinding requirements, and short sintering times and product size control of under 3% enable a range of structural shapes to be produced. Unfortunately, its bending strength is lower than normal sintered silicon carbide due to larger residual Si sizes; to enhance bending strength it must be kept below 100nm for best results.

Reaction Bonding

Reaction bonded silicon carbide (RB-SiC) has long been utilized for applications that require low weight, such as mirrors for remote sensing machines in space. Furthermore, its excellent wear, impact and chemical resistance makes RB-SiC an attractive material choice for mechanical seals and kiln furniture applications. Furthermore, this material can be produced in any desired shape–from simple cone and sleeve shapes all the way through complex engineered pieces designed specifically to process raw materials.

Reaction bonding involves infiltrating liquid silicon into porous carbon-based SiC/C preforms. As soon as infiltrated silicon interacts with amorphous carbon present on its surface, precipitating secondary silicon carbide (sSiC) precipitation and subsequent pore closure occurs resulting in a composite material consisting of original SiC and sSiC with minimal green porosity.

Reaction bonding is a relatively new technology that holds immense promise for lightweight silicon carbide ceramic production. It uses an organic plasticizer, carbon, and SiC blend as its building block. Once formed into desired form it is burned off to remove plasticizer before infiltrating it with gaseous or liquid silicon at high temperature to produce material with superior green density and mechanical properties than traditional reaction sintering methods. Furthermore it’s simple and quick cycle makes this an attractive engineering application solution; furfuryl alcohol resin or epoxy resin could even serve as its bonding agents instead of just using phenol resin as it’s bonding agents!


Recrystallization is an effective means of purifying an impure compound. This technique works by dissolving both compounds and impurities into a solvent and then filtering out any leftover liquid; scientists then collect any pure crystallized precipitate that forms from this solution before filtering out any remaining solvent. Finally, they evaporate it to leave behind a crystallized product which is significantly cleaner than before.

Recrystallization begins by choosing an appropriate solvent. It must dissolve the compound being recrystallized without reacting with it and be able to tolerate high temperatures; crystal growth accelerates more rapidly when exposed to heat.

Recrystallization begins by heating material to between 0.4 and 0.6 times its melting point, stimulating atomic movement to produce nucleation – the formation of small grains within metal without dislocations and stresses – known as nucleation. These new grain structures enhance material strength and toughness for improved material strength and toughness.

Scientists can further enhance recrystallization processes by adding small crystals, or seeds, of their compound into solution. This helps stimulate molecular interactions and speed up formation of larger crystalline grains typical of recrystallization.