Silicon Carbide Ceramic
Our high quality silicon carbide ceramic is fabricated by using high quality silicon carbide raw material, advanced formula, and high temperature firing process.
Silicon Carbide is normally formed in two ways, Reaction Bonding and Sintering. Each forming method greatly affects the end microstructure.
Reaction bonded Silicon carbide is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming more SiC which bonds the initial SiC particles.
Sintered Silicon carbide is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000 degree or higher.
Both forms of Silicon Carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance. Our engineers are always available to best advise you on the strengths and weaknesses of each ceramic for your particular needs.
please find the indicators as follows for silicon carbide ceramic
Sintered Silicon Carbide Ceramic(PDF file)
Reaction Bonded Silicon Carbide ceramic(PDF file)
The mirror image of sintered silicon carbide materials shows that under 200 ×optical microscope,crystals presents uniform distribution and size is well-proportioned after the chemical corrision. Also the biggest crystal is no more than 10um
The mirror image of Reaction bonded silicon carbide materials shows that under 200 ×optical microscope,crystals presents uniform distribution and size is well-proportioned after the chemical processing of the smooth material section. Also the free silicon is no more than 12%
Below is reaction bonded silicon carbide sintering furnace
Below is sintered silicon carbide furnace