Silicon Carbide is formed in two ways, Reaction Bonding and Sintering.
Each forming method greatly affects the end microstructure.
Reaction bonded Silicon Carbide ceramic is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the
Carbon forming more SiC which bonds the initial SiC particles.
Sintered Silicon Carbide ceramic is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ºC or
Both forms of Silicon Carbide (SiC) are highly wear resistant with
good mechanical properties, including high temperature strength and
thermal shock resistance.